Samsung Electronics (OTCPK:SSNLF) has completed development of its sixth-generation High Bandwidth Memory (HBM4) and has entered the preparatory stage for mass production, according to AJU News. The company is now sending HBM4 prototypes to Nvidia (NVDA) for rigorous quality certification.

Samsung expects full development of HBM4 to conclude before year-end. Pending Nvidia’s approval, mass production could begin immediately, with manufacturing systems already being set up.

HBM4 Reaches Final Pre-Production Phase

PRA Phase Completed

Samsung recently achieved Production Readiness Approval (PRA) — the sixth and final development step before mass-production authorization. This milestone positions Samsung to rapidly scale production once validation from Nvidia is completed.

Powered by Advanced D1c DRAM

HBM4 progress accelerated after Samsung successfully developed its 10nm-class 6th-generation DRAM (D1c) in June. The company plans to leverage this next-gen DRAM, which is one generation ahead of competitors, to regain leadership against SK hynix and strengthen its AI memory performance edge.

Samsung’s Growing AI Memory Roadmap

HBM4 Samples Already Sent to Clients

During its Q3 earnings results, Samsung noted that HBM4 samples were already being shipped to major customers. Looking ahead to 2026, the company plans to prioritize mass production of HBM4 products offering differentiated performance, targeting explosive demand from AI compute and hyperscaler customers.

Competition Heats Up: SK hynix and Micron

The HBM4 race is intensifying:

SK hynix announced in September that it had completed development and preparation for mass production of HBM4.
SK hynix remains the major supplier of HBM chips to Nvidia, giving it an existing lead.
Micron Technology (MU) is a smaller but active competitor in next-generation HBM.

Samsung’s ability to quickly validate and mass-produce HBM4 could shift competitive dynamics in the AI memory supply chain.